Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes

نویسندگان

  • Patrick M. McBride
  • Qimin Yan
  • Chris G. Van de Walle
چکیده

Articles you may be interested in Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes Appl. Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells Appl.

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تاریخ انتشار 2014